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A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

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5 Author(s)
Loquai, S. ; Polymer Opt. Fiber Applic. Center (POF-AC), Nuernberg, Germany ; Bunge, C.-A. ; Ziemann, O. ; Schmauss, B.
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A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).

Published in:

Lightwave Technology, Journal of  (Volume:28 ,  Issue: 18 )

Date of Publication:

Sept.15, 2010

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