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Development, characterization and integration of a novel boron nitride process for application as a Cu diffusion barrier

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6 Author(s)
Yi Chen ; Appl. Mater., Inc., Santa Clara, CA, USA ; Spuller, M. ; Balseanu, M. ; Zhenjiang Cui
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The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric copper barrier and etch stop.

Published in:

Interconnect Technology Conference (IITC), 2010 International

Date of Conference:

6-9 June 2010

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