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The results of lifetime testing of Cu/Sn-Cu eutectic bonded dice at 10μm pitch in large area arrays of 325,632 interconnects are shown. The interconnect bonding process (pressure and temperature) required for the formation of low resistance (~100 mΩ), high yielding (99.99% individual bond yield), and reliable interconnects is described. The effects of thermal cycling on electrical yield and resistance are presented. Ultra-low temperature eutectic bonding (at 210°C, below the melting point of tin) is demonstrated to produce high electrical yield, high shear strength and similar intermetallic compound formation to devices bonded at the standard 300°C temperature. Electrical results, shear test results, SEM cross sections and EDS analysis comparisons are presented. The ultralow temperature process may prove useful for integrating IC dice that have low thermal budgets.
Date of Conference: 6-9 June 2010