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One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by \hbox {SiO}_{2} -Based Solid Electrolyte With Controllable Operation Modes

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4 Author(s)
Jia Sun ; Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education and the State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, China ; Jie Jiang ; Aixia Lu ; Qing Wan

Microporous SiO2 can provide large electric-double-layer (EDL) capacitance and negligible leakage current, owing to lack of electron carrier and limited mobility of mobile ions. The impedance spectroscopy (ionic-conductivity-frequency and capacitance-voltage characteristics) and Fourier-transformed infrared spectroscopy of microporous SiO2 are characterized, which demonstrated that such dielectric is actually a solid-electrolyte dielectric. InGaZnO4 thin-film transistors (TFTs) on paper substrates gated by microporous-SiO2 solid electrolyte are fabricated at room temperature. The large EDL-specific capacitance (1.36 μF/ cm2) results in the paper TFTs operate at a battery-drivable low voltage of 1.0 V. Both depletion-mode (Vth = -0.45 V) and enhancement-mode (Vth = 0.25 V) operations are realized by rationally controlling the oxygen concentration in argon ambient during InGaZnO4 channel deposition. Electrical characteristics with an equivalent field-effect mobility of ~ 21 cm2/V·s, a current on/off ratio of greater than 105, and a subthreshold swing of ~ 80 mV/dec are demonstrated at low frequencies, which are promising for portable paper electronics.

Published in:

IEEE Transactions on Electron Devices  (Volume:57 ,  Issue: 9 )