One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{SiO}_{2}$-Based Solid Electrolyte With Controllable Operation Modes

Microporous SiO
₂
can provide large electric-double-layer (EDL) capacitance and negligible leakage current, owing to lack of electron carrier and limited mobility of mobile ions. The impedance spectroscopy (ionic-conductivity-frequency and capacitance-voltage characteristics) and Fourier-transformed infrared spectroscopy of microporous SiO
₂
are characterized, which demonstrated that such dielectric is actually a solid-electrolyte dielectric. InGaZnO
₄
thin-film transistors (TFTs) on paper substrates gated by microporous-SiO
₂
solid electrolyte are fabricated at room temperature. The large EDL-specific capacitance (1.36 μF/ cm
²
) results in the paper TFTs operate at a battery-drivable low voltage of 1.0 V. Both depletion-mode (V
_th
= -0.45 V) and enhancement-mode (V
_th
= 0.25 V) operations are realized by rationally controlling the oxygen concentration in argon ambient during InGaZnO
₄
channel deposition. Electrical characteristics with an equivalent field-effect mobility of ~ 21 cm
²
/V·s, a current on/off ratio of greater than 10
⁵
, and a subthreshold swing of ~ 80 mV/dec are demonstrated at low frequencies, which are promising for portable paper electronics.