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Design for Manufacturing of Low-Voltage Three-Dimensional Capacitors

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3 Author(s)
Nongaillard, M. ; Ampere Lab., Inst. Nat. des Sci. Appl. de Lyon, Villeurbanne, France ; Lallemand, F. ; Allard, B.

Given an existing manufacturing technology, the influence of the design parameters has been evaluated in order to improve the robustness of the 3-D capacitors. The objective is to select the capacitor patterns that provide a satisfying density with the required robustness with respect to the reliability indicators. The geometrical and manufacturing-related issues are both considered. The main manufacturing issues are the etching, deposition, and warpage of the wafer. The improvements have been observed experimentally for the robustness of the 3-D structures and the density of the capacitor which are increased for several proposed 3-D patterns. All capacitors tested in this paper are realized with PICS technology.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:10 ,  Issue: 3 )