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Structure-dependent reliability assessment of 1.3 μm InGaAsP/InP uncooled laser diodes by accelerated aging test

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7 Author(s)
Nam Hwang ; Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Gwan-Chong Joo ; Sang-Hwan Lee ; Seong-Su Park
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The purpose of this paper is to demonstrate reliability analysis of 1.3 μm InGaAsP/InP MQW-PHB laser diodes (LD) for high speed optical communication systems. We have accelerated aging tests and compared the assessment of 1.3 μm InGaAsP/InP strain-compensated MQW PBH-LD's with different numbers of quantum well (NQW) and active width (WA). The experimental results show that ΔIth is related with WA rather than with N QW. For the same WA, we have observed that the variation of NQW has less effect on ΔIth which is primarily due to the limitation of the fabrication process in controlling the uniformity and homogeneity in the MQW layer

Published in:

Electronic Components and Technology Conference, 1996. Proceedings., 46th

Date of Conference:

28-31 May 1996