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Modelling of power metal-oxide semiconductor field-effect transistor for the analysis of switching characteristics in half-bridge converters

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3 Author(s)
Xu, S. ; Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China ; Liu, X. ; Sun, W.

Considering the power metal-oxide semiconductor field-effect transistor (MOSFET) parasitic elements, the switching characteristics of half-bridge converters are analysed. First, the switching operation process of the converter is discussed, including Cdv/dt induced voltage, turn-on and turn-off transient and drain-source voltage oscillations. Then an analytical model of power MOSFET is deduced and validated. Based on the model and Saber software, the switching characteristics of half-bridge converters are simulated with different values of parasitic elements. Finally, according to the simulation results, the design optimisations are presented, and an experimental prototype is used to validate the proposed approach.

Published in:

Circuits, Devices & Systems, IET  (Volume:4 ,  Issue: 4 )

Date of Publication:

July 2010

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