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The stimulated ignition of latchup effects caused by external radiation has till now proved to be a hidden hazard. However this paper presents the effect in a new light-as a new approach for detecting particles by means of a solid-state device susceptible to latchup effects. This device can also be used as a circuit for reading a sensor's signal by leaving off-circuit sensing capabilities. Given that MOS transistors are widely used in microelectronics devices and sensors, the latchup-based cell is proposed as a new structure for future applications in particle detection, in the amplification of sensor signals and also in radiation monitoring.