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240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

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7 Author(s)
Lahrichi, M. ; III-V Lab., Alcatel-Thales, Marcoussis, France ; Glastre, G. ; Derouin, E. ; Carpentier, D.
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We demonstrate an AlInAs-InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at M = 1), very low excess noise factor (F(M=10) = 3), and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs-InGaAs APD achieved such performances.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 18 )