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Doping and Illumination Dependence of \hbox {1}/f Noise in Pentacene Thin-Film Transistors

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4 Author(s)
Zhang Jia ; Department of Electrical Engineering, Columbia University, New York, NY, USA ; Inanc Meric ; Kenneth L. Shepard ; Ioannis Kymissis

We characterize the influence of interfacial trap sites on carrier scattering and subsequent contribution to channel noise by taking 1/f noise measurements on pentacene organic field-effect transistors (OFETs). The noise dependence on drain current from OFETs with UV-ozone treated parylene gate dielectric before the deposition of the semiconductor is compared to that of otherwise identical OFETs with no air exposure during fabrication. Our studies indicate a different noise characteristic in the two samples, which is further confirmed by increasing the carrier density under illumination and comparing the noise spectrum for photogenerated charges with gate-field-induced carriers.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 9 )