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Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS

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4 Author(s)
Lee, S. ; Electr. Eng., Seoul Nat. Univ., Seoul, South Korea ; Lee, H. ; Woo, J.-K. ; Kim, S.

A low-voltage bandgap reference (BGR) circuit is designed and fabricated in a 90 nm CMOS technology. To mitigate error resulting from the mismatch in temperature dependency of the current in the output current mirror device and that of the BGR core, an output-regulated current mirror is incorporated. Experimental results show that the output voltage is 497.2 mV at 25οC with a temperature coefficient of 28.3 ppm/ C between -40οC and 80οC. The circuit occupies 0.0337 mm2 and dissipates 276.6 pW with a supply voltage of 1.2 V.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 14 )