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High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

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5 Author(s)
Hung-Wen Huang ; Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan ; Huang, Jhi-Kai ; Shou-Yi Kuo ; Kang-Yuan Lee
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3456385 

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 26 )

Date of Publication:

Jun 2010

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