By Topic

Electronic structure variation during aging for Mg–Zr–O protective films in alternating current plasma display panel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Wu, Huiyan ; State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China ; Wang, Jianfeng ; Song, Zhongxiao ; Xu, Kewei
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3456493 

The variation in both the discharge characteristic and microstructure during aging for Mg–Zr–O protective films was investigated. In the aging process, the firing voltage and the minimum sustain voltage were reduced by 18 V and 10 V, respectively. Meanwhile, the results of x-ray photoelectron spectroscopy (XPS) measurement revealed that the valence band edge of Mg–Zr–O protective films was slightly shifted to a low binding state and the density of states for valence bands was increased. The electronic structure variation related to the changes in crystal structure had an obvious influence on the improvement of discharge characteristic of Mg–Zr–O films.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 1 )