By Topic

Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Doscher, H. ; IEPT, Clausthal University of Technology, Clausthal-Zellerfeld, Germany and E-I5, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin 14109, Germany ; Lilienkamp, G. ; Iskra, P. ; Kazempoor, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3425637 

ZrO2 films with a thickness as low as 4 nm and a roughness of about 0.2 nm have been deposited on Si(001) by a sol-gel process. After pyrolysis in air clean and dense ZrO2 films were obtained. To simulate the influence of thermal processes in complementary metal-oxide-semiconductor fabrication on high-k gate oxides, our samples have been subjected to heat treatments up to 1000 °C. The chemical composition of the ZrO2 films and of the interface region has been monitored by Auger electron spectroscopy (AES) and AES depth profiles. No notable chemical changes in the interface region have been detected after heating at 700 °C in 2×10-5 mbar oxygen partial pressure and rapid annealing to 1000 °C. At 700 °C and 10-4 mbar oxygen partial pressure an intermediate interface layer starts to grow by oxidation of the Si substrate. Annealing above 700 °C in UHV leads to the destruction of the sample. Loss of oxygen is accompanied with the formation of islands containing Zr and Si and of holes extending up to 200 nm deep into the Si substrate.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 4 )