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This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height ΦBn for n-FETs and a low hole barrier height ΦBp for p-FETs) using just one additional masking and two ion-implant steps. Independent and effective tuning of contact resistance RC is achieved in both p- and n-FinFETs. The compensation effect of aluminum and sulfur implants is studied for the first time and exploited for process simplification. A novel cost-effective integration scheme is shown to give significant IDSAT enhancement for p- and n-FinFETs.