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Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition

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4 Author(s)
Jyun-Yi Wu ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Yen-Ting Chen ; Ming-Ho Lin ; Wu, Tai-Bor

Charge storage characteristics of a hafnium oxynitride (HfON) charge-trapping layer prepared by atomic layer deposition in a metal-Al2O3-HfON-SiO2-Si (MAHNOS) structure are investigated. We found that an ultrathin HfON (~2.5 nm) embedded in MAHNOS has large memory window (~7.5 V at Vg = ±15 V), sufficient erase speed (Δ VFB = 4 V at -16 V/1 ms), and satisfactory data retention. From the relation of erase transient current density (J) versus tunnel oxide e-field (ETUN), we also found that the erase mechanism of MAHNOS depends on electron detrapping from HfON to Si substrates. However, MAHNOS embedding with a thicker HfON shows a poor data retention due to the increase of crystallization of the trapping layer.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 9 )