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Ink-Jet-Printed Zinc–Tin–Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process

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7 Author(s)
Yong-Hoon Kim ; Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam, Korea ; Kwang-Ho Kim ; Min Suk Oh ; Hyun Jae Kim
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We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed a-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed a-ZTO TFTs (W/L = 100 μm/10 μm) have shown a carrier mobility of 4.98 cm2/V · s with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The a-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 8 )