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The drain bias stress effect on organic thin-film transistor (OTFT) performance degradation in the atmosphere has been investigated. The OTFTs under drain bias stress exhibit larger performance degradation than those under atmospheric stress. It is also found that the performance degradation under positive drain bias stress is larger than that under negative drain bias stress. We presume that the OTFT performance degradation under positive drain bias stress resulted from large lateral electrical field and vertical electrical field, resulting in increased trap state density (Ntrap) in the bulk channel and carrier injection into the gate insulator, respectively.