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11.2: “Digital” vacuum microelectronics: Carbon nanotube-based Inverse Majority Gates for high temperature applications

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5 Author(s)
Harish Manohara ; Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, USA, 91109 ; Mohammad Mojarradi ; Risaku Toda ; Robert Lin
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Inverse Majority Gate using carbon nanotube cathodes and silicon micromachined vacuum cavities is developed for high temperature applications. We have achieved switching operation of this unique device at temperatures up to 700° C. The concept, the initial design and operation, the potential performance in an improved design are presented in this paper.

Published in:

Vacuum Electronics Conference (IVEC), 2010 IEEE International

Date of Conference:

18-20 May 2010