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12.4: Research progress of S-band broadband klystron in IECAS

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5 Author(s)
Yong Wang ; Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, No.19 Beisihuan Xilu, Beijing 100190, China ; Yaogen Ding ; Pukun Liu ; Zhiqiang Zhang
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From 1960s the Institute of Electronics, Chinese Academy of Sciences (IECAS) began to study the broadband klystron. Many methods to extend bandwidth of klystron have been adopted and more than ten types of broadband klystron have been developed. Recently we have successfully broken through the bandwidth of 12% in S-band on the peak power level of 800 kW. This paper introduces the state-of-art of our S-band broadband klystron.

Published in:

Vacuum Electronics Conference (IVEC), 2010 IEEE International

Date of Conference:

18-20 May 2010