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18.5: Development of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron

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6 Author(s)
Zhao-chuan Zhang ; Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China ; Bao-li Shen ; Chun-jiu Fu ; Xiao-juan Yu
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This paper reports the design considerations, simulation results and test specifications of an S-band, 200 MHz instantaneous bandwidth, 22 kW average power klystron, which was developed by the Institute of Electronics, Chinese Academy of Sciences (IECAS) before Dec., 2009. The overlapping mode technology is adopted in the output section to provide appropriate interaction impedance within the confines of the required bandwidth. The typical result is a more than 1.1 MW peak output power with a 67 μs RF pulse width, a 300 Hz repetition rate, and the output power fluctuation is less than 1.2 dB at the same input power.

Published in:

Vacuum Electronics Conference (IVEC), 2010 IEEE International

Date of Conference:

18-20 May 2010