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Magnetic tunnel junctions with Co-based perpendicular magnetic anisotropy multilayers

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3 Author(s)
Tadisina, Z.R. ; MINT Center, University of Alabama, Box 870209, Tuscaloosa, Alabama 35487 ; Natarajarathinam, A. ; Gupta, S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3430549 

Magnetic CoFeB/MgO/CoFeB-based tunnel junctions with perpendicular magnetic anisotropy Co/M multilayers (M=Ni, Pd, Pt) have been investigated as a function of structural and magnetic properties. Magnetometry, ferromagnetic resonance, x-ray diffraction, stress tests, and local electrode atom probe tomography were carried out primarily on Co/Ni multilayers. A statistical design of experiments was conducted to optimize the perpendicular magnetic anisotropy and damping parameter α of these multilayers. Seed layers, thickness, and thickness ratios are all critical to achieve perpendicular behavior. Perpendicular MgO-based magnetic tunnel junctions with Co/Ni and Co/Pd reference and free layers were fabricated and tested. Sharp MR-H switching characteristics were observed for the Co/Pd multilayers, and a somewhat softer transition was observed for the Co/Ni multilayer with a Cu seed, which did not have as high a perpendicular anisotropy. Tunneling magnetoresistance (TMR) values were limited to about 10%, primarily because the fcc-bcc-fcc transition does not promote the “MgO giant TMR” symmetry filtering effect.

Published in:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:28 ,  Issue: 4 )

Date of Publication: Jul 2010

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