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Fabrication and characterization of ink jet processed organic thin film transistors with poly-4-vinylphenol gate dielectric

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4 Author(s)
Eum, Kyuhag ; School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea ; Kyohyeok Kim ; Han, Jaejun ; Ilsub Chung

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3358162 

Organic thin film transistors (OTFTs) were fabricated on polyethersulphone substrate using 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene as an active layer and cross-linked poly-4-vinylphenol (PVP) as a gate dielectric. Prior to adoption of PVP as a gate dielectric, the PVP print condition was optimized using a metal-insulator-metal structure and making a comparison with spin coated devices in terms of the leakage current, breakdown voltage, and dielectric constant. Then, OTFTs were fabricated with an optimized PVP gate dielectric and a TIPS pentacene active layer using an ink jet printer. The electrical properties such as the field effect mobility, Ion/Ioff ratio, and threshold voltage had values of 0.055 cm2/Vs, 103, and -2.6 V, respectively. The smaller Ion/Ioff ratio can be attributed to the smaller coverage of the TIPS pentacene layer due to the plateletlike crystalline structures.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:28 ,  Issue: 4 )

Date of Publication:

Jul 2010

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