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Monoclinic textured HfO2 films on GeOxNy/Ge(100) stacks using interface reconstruction by controlled thermal processing

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5 Author(s)
Bastos, Karen Paz ; Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 ; Miotti, Leonardo ; Lucovsky, Gerald ; Chung, Kwun-Bum
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The authors used x-ray absorption spectroscopy of the O K edge to investigate the nanocrystalline structure of thin HfO2 films deposited by remote plasma enhanced chemical vapor deposition on Ge(100). Postdeposition thermal process induced the interfacial reconstruction and the crystallization of the HfO2 in the monoclinic structure driven by the Ge(100) substrate. The substrate templating of the HfO2 crystallization is an evidence that the processing used here removes the undesired the interfacial layer and has the potential to yield interfaces with low density of defects.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:28 ,  Issue: 4 )