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Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode

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7 Author(s)
Shen, Kun-Ching ; Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Chen, Cheng-Yen ; Lu, Yen-Cheng ; Che-Hao Liao
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Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.

Published in:

Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on

Date of Conference:

16-21 May 2010

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