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Design of gain optimized broadband low noise amplifiers at 120 GHz using SiGe technology

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5 Author(s)
Chakraborty, A. ; Fachgebiete Mikrowellenelektronik, Tech. Univ. Darmstadt, Darmstadt, Germany ; Hartnagel, H.L. ; Kissinger, D. ; Laemmle, B.
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This paper presents the design of single-ended, double stage cascode low noise amplifiers at 120 GHz. A design methodology employing three techniques for gain enhancement of the LNA is presented. The effect of traditional emitter - degeneration technique and its feasibility for simultaneous noise and power matching is evaluated at 120 GHz. The LNAs are designed in a 250 GHz fT and 300 GHz fmax 0.13 μm SiGe:C BiCMOS process. By employing the three design techniques the gain of the LNA is improved by almost 3.5 dB. The two stage gain optimized LNA achieves a gain of 24 dB and a noise figure of 7.2 dB. The circuit works with a supply voltage of 3.3 V and consumes less than 40 mW of power.

Published in:

German Microwave Conference, 2010

Date of Conference:

15-17 March 2010

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