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Validation of a theoretical model for NFmin estimation of SiGe HBTs

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3 Author(s)
Sarmah, N. ; IHP GmbH, Frankfurt (Oder), Germany ; Schmalz, K. ; Scheytt, C.

An evaluation based on a comparative study between two previously published models for minimum noise figure (NFmin) for heterojunction bipolar transistors (HBT) is presented. The complete set of noise parameters is extracted from the Y parameters of the transistor. The results from the published models have been compared with simulation and measurement results in IHP's SiGe C: BiCMOS technology.

Published in:

Microwave Conference, 2010 German

Date of Conference:

15-17 March 2010