By Topic

A passive mixer for 60 GHz applications in CMOS 65nm technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ercoli, M. ; LAAS, CNRS, Toulouse, France ; Kraemer, M. ; Dragomirescu, D. ; Plana, R.

A study of the feasibility of a wide band double balanced resistive mixer in the 60 GHz band is done. The device is implemented in a 65nm CMOS technology process. In this paper an approach to design an optimized version of the mixer in terms of the principal figures of merit: conversion loss, port to port isolation and noise figure is shown. The mixer will be a part of an homodyne down-conversion system. The conversion loss is 6.9 ± 0.2dB around 60GHz with a -5dBm of LO drive. The port-to-port isolation for the LO feed through is better than 41dB. The noise figure is 8.39dB. The power dissipation for the mixer depends on the LO buffer that increases the input LO power. Its power consumption is 15mW.

Published in:

German Microwave Conference, 2010

Date of Conference:

15-17 March 2010