Referenced Items are not available for this document.
A p-channel dopant-segregated-Schottky-barrier (DSSB) device based on a SOI FinFET structure is proposed for silicon-oxide-nitride-oxide-silicon type Flash memory, providing the feasibility of bit-by-bit operation through the aid of a symmetric program/erase operation. This concept is based on utilizing injected holes due to enhanced Fowler-Nordheim tunneling probability triggered by the sharpened energy band bending at the DSSB source/drain junctions as a programming method and the tunneled electrons from a silicon channel as an erasing method. As a result, a threshold voltage window of nearly 4 V and good data retention are achieved within a P/E time of 3.2 μs.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
8
)
Date of Publication: Aug. 2010
- Page(s):
- 1737 - 1742
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11433092
- Digital Object Identifier :
- 10.1109/TED.2010.2051331
- Product Type:
- Journals & Magazines
- Date of Publication :
- 28 June 2010
- Date of Current Version :
- 23 July 2010
- Issue Date :
- Aug. 2010
- Sponsored by :
- IEEE Electron Devices Society
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