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A simple but robust methodology for the extraction of threshold voltage (Vt) and hole mobility by ultrafast switching measurement on NBTI is demonstrated. It is shown that during the measurement of the linear drain current (Id) versus gate voltage (Vg) curve by ultrafast switching, recovery can be constantly minimized at a very short delay (100 ns) and made independent of the aggregate Id-Vg measurement time (~5 s). In conjunction with the Y -function method, Vt and mobility degradation can be straightforwardly and yet accurately examined over the same measurement voltage range. Moreover, their respective contributions toward p-MOSFET NBTI can clearly be delineated.