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Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires

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3 Author(s)
Soudi, A. ; Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164, USA ; Dhakal, P. ; Gu, Y.

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The minority carrier diffusion length, LD, was directly measured in individual ZnO nanowires by a near-field scanning photocurrent microscopy technique. The diameter dependence of LD suggests a diameter-dependent surface electronic structure, particularly an increase in the density of mid-band-gap surface states with the decreasing diameter. This diameter dependence of the surface electronic structure might be a universal phenomenon in wurtzite-type nanostructures, and is critical in interpreting and understanding the effects of surfaces on various material properties.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 25 )

Date of Publication:

Jun 2010

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