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Conditional threshold wear-leveling algorithm for multi-channel NAND flash memory

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2 Author(s)
Wen-Kai Hsieh ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Hsi-Pin Ma

Recently, NAND flash memory has become a widely-used data storage media. However, it has endurance problem that each NAND flash block has limited erase cycles. The first time erase failure usually occurs when a block has over 10K-100K erase cycles. Wear-leveling is a technique to solve this problem and extend the lifetime of a flash memory. In this paper, a conditional threshold wear-leveling algorithm fitting multi-channel architecture is proposed. The overall wear-leveling operation is separated and distributed to different channels. This reduces the runtime of the wear-leveling operation. The conditional threshold can reduce extra erase operations caused by wear-leveling when the flash memory is young. As the flash memory becomes older, the smaller threshold makes wear-leveling work more frequently to get more even erase cycle distribution.

Published in:
VLSI Design Automation and Test (VLSI-DAT), 2010 International Symposium on

Date of Conference: 26-29 April 2010

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