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Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal

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5 Author(s)
Kim, Ja-Yeon ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea ; Kwon, Min-Ki ; Park, Seong-Ju ; Kim, Sang Hoon
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3454240 

We report the development of a GaN-based green light-emitting diode (LED) with a selective area photonic crystal (SPC) structure, which was formed outside the p-bonding electrode on p-GaN. As a result, the optical output power of LEDs with SPC was enhanced by 78% compared to that without PC. In addition, the forward voltage, series resistance, and leakage current of LEDs with SPC were remarkably improved. These results show that the light extraction efficiency of green LEDs can be greatly increased using the SPC structure, with no degradation of electrical properties.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 25 )

Date of Publication:

Jun 2010

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