Cart (Loading....) | Create Account
Close category search window
 

Microstructure and initial growth characteristics of nanocrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wang, Xiang ; Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, People’s Republic of China ; Rui Huang ; Song, Jie ; Guo, Yanqing
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3445876 

Nanocrystalline silicon (nc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. It is found that at early growth stage the initial amorphous incubation layer in nc-Si:H growth on silicon oxide can be almost eliminated and crystallites with diameter of about 6 to 10 nm are directly formed on the silicon oxide. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. It is considered that highly H2 dilution and higher excitation frequency are the main reason for eliminating the initial amorphous incubation layer in nc-Si:H growth on silicon oxide.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 12 )

Date of Publication:

Jun 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.