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Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBT

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7 Author(s)
Matloubian, M. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Fetterman, H. ; Kim, M.E. ; Oki, A.
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The S parameters of an AlGaAs/GaAs heterojunction bipolar transistor (HBT) are measured using a picosecond optoelectronic system. The measured S parameters show qualitatively good agreement with those obtained using a conventional vector network analyzer. The optical response of the HBT is also measured using this system by directly illuminating the base-collector region. Used as a phototransistors, the HBT shows pulse widths with full-width half-maximum (FWHM) as short at 15 ps

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:38 ,  Issue: 5 )