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Design and applications of optically controllable finline structures

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2 Author(s)
K. Uhde ; Philips GmbH, Hamburg, West Germany ; R. Eimertenbrink

The design of finline structures on a semiconducting substrate is described. Using high-resistivity silicon and gallium arsenide substrates, insertion losses between 1 dB and 2 dB are achieved. By illuminating the slot region with a laser diode, attenuators and/or switches with on-off ratios up to -40 dB are realized in the 26.5-40 GHz region. The attenuation, phase shift, and switching times are given. Other applications are also discussed

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:38 ,  Issue: 5 )