Referenced Items are not available for this document.
The design of finline structures on a semiconducting substrate is described. Using high-resistivity silicon and gallium arsenide substrates, insertion losses between 1 dB and 2 dB are achieved. By illuminating the slot region with a laser diode, attenuators and/or switches with on-off ratios up to -40 dB are realized in the 26.5-40 GHz region. The attenuation, phase shift, and switching times are given. Other applications are also discussed
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:38
,
Issue:
5
)
Date of Publication: May 1990
- Page(s):
- 679 - 683
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 3710938
- Digital Object Identifier :
- 10.1109/22.54943
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1990
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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