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Balance of power

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1 Author(s)
Dyball, H. ; IET, Stevenage, UK

Researchers at TriQuint Semiconductor in the US have developed a GaN high electron mobility transistor (HEMT) on Si substrate that can deliver an X-band power performance comparable to that of a standard GaN on SiC device. It has the highest power added efficiency (PAE) ever achieved for these devices: 65 at 10 GHz, and this result makes GaN on Si technology an attractive, cost-effective solution for several military and commercial applications, such as radar and wireless communications in the S- to X-band range (2-12 GHz).

Published in:

Electronics Letters  (Volume:46 ,  Issue: 13 )

Date of Publication:

June 24 2010

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