Cart (Loading....) | Create Account
Close category search window

Balance of power

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Dyball, H. ; IET, Stevenage, UK

Researchers at TriQuint Semiconductor in the US have developed a GaN high electron mobility transistor (HEMT) on Si substrate that can deliver an X-band power performance comparable to that of a standard GaN on SiC device. It has the highest power added efficiency (PAE) ever achieved for these devices: 65 at 10 GHz, and this result makes GaN on Si technology an attractive, cost-effective solution for several military and commercial applications, such as radar and wireless communications in the S- to X-band range (2-12 GHz).

Published in:

Electronics Letters  (Volume:46 ,  Issue: 13 )

Date of Publication:

June 24 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.