By Topic

Thermal Stability of Nickel Germanide Formed on Tensile-Strained Ge Epilayer on Si Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Mengrao Tang ; Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, China ; Wei Huang ; Cheng Li ; Hongkai Lai
more authors

The thermal stability of a nickel germanide film formed on a tensile-strained Ge epilayer on a silicon substrate with a low-temperature Si0.77Ge0.23 (50-nm)/Ge (50-nm) buffer is investigated. A record temperature of 700°C for the stability of sheet resistance of nickel germanide is reported, which is increased by about 150°C compared to that on bulk Ge and comparable to the temperature for nickel silicide on the Si substrate. The improvement of the thermal stability is demonstrated due to the delay of the agglomeration of the nickel germanide film on Ge-on-Si, which is proposed to be attributed to the increase of the tensile strain in the Ge epilayer during thermal annealing due to the thermal mismatch between Si and Ge.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 8 )