Phase-Change Memory Devices Operative at 100 $^{\circ} \hbox{C}$

Phase-change memory (PCM), although promising operative at room temperature, is struggling to achieve ten-year data retention over 100°C. We disclose here that a PCM device made of the composition Ga
₂₅
Te
₈
Sb
₆₇
exhibits normal operation at 100°C for an endurance of at least 3 × 10
⁵
cycles. At room temperature, the endurance is at least 5 × 10
⁶
cycles. The set-reset speed of the devices reaches 20 ns, and the reset current is around 20% less than that of our reference test cells made of the benchmark Ge
₂
Sb
₂
Te
₅
.