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Phase-change memory (PCM), although promising operative at room temperature, is struggling to achieve ten-year data retention over 100°C. We disclose here that a PCM device made of the composition Ga25Te8Sb67 exhibits normal operation at 100°C for an endurance of at least 3 × 105 cycles. At room temperature, the endurance is at least 5 × 106 cycles. The set-reset speed of the devices reaches 20 ns, and the reset current is around 20% less than that of our reference test cells made of the benchmark Ge2Sb2Te5.