Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Phase-Change Memory Devices Operative at 100 ^{\circ} \hbox {C}

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kao, K.F. ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chu, Y.C. ; Chen, F.T. ; Tsai, M.J.
more authors

Phase-change memory (PCM), although promising operative at room temperature, is struggling to achieve ten-year data retention over 100°C. We disclose here that a PCM device made of the composition Ga25Te8Sb67 exhibits normal operation at 100°C for an endurance of at least 3 × 105 cycles. At room temperature, the endurance is at least 5 × 106 cycles. The set-reset speed of the devices reaches 20 ns, and the reset current is around 20% less than that of our reference test cells made of the benchmark Ge2Sb2Te5.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 8 )