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High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal–Organic Silicon Precursor and Oxygen Radical

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4 Author(s)

Recently, SiO2 grown at low temperatures has been highlighted for a range of applications. In this letter, SiO2 films were deposited at 280°C by plasma-enhanced atomic layer deposition (ALD) using bis-diethylamino-silane and O2 plasma. The electrical conduction mechanisms of a 38-nm-thick SiO2 film were found to be ohmic and Fowler-Nordheim tunneling in the low- and high-voltage ranges, respectively. The electrical breakdown field of the silicon oxide films was measured at ~10 MV/cm. The excellent breakdown field was well explained by the fact that ALD SiO2 has very low carbon content (<; 0.5%) and does not have any oxygen deficiency and nonbridging oxygen. Compared to wet SiO2, the increase in etch rates was attributed to the existence of strained bonds.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 8 )

Date of Publication:

Aug. 2010

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