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High-Performance Metal–Insulator–Metal Capacitors With \hbox {HfTiO}/\hbox {Y}_{2}\hbox {O}_{3} Stacked Dielectric

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3 Author(s)
Bing-Yue Tsui ; Department of Electronics Engineering and the Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan ; Hsiao-Hsuan Hsu ; Chun-Hu Cheng

The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y2O3 dielectric shows a capacitance density that is higher than 11 fF/μm2 and VCC-α that is lower than 1222 ppm/V2. The leakage currents at -1 and -2 V are 6.4 and 14 nA/cm2, respectively. These results suggest that the HfTiO/Y2O3 stacked dielectric is a promising candidate for MIM capacitors.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 8 )