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Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

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9 Author(s)
Nainani, A. ; Department of Electrical Engineering, Center for Integrated Systems, Stanford University, Stanford, California 94305, USA ; Jung Yum ; Barnett, J. ; Hill, R.
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In this work, effect of uniaxial stress is studied by wafer bending on p/n-channel candidates for III-V based complimentary logic. p-GaSb has 2× higher piezoresistance (π) coefficient than p-In0.53Ga0.47As, which combined with high hole-mobility in GaSb makes it an attractive candidate for III-V p-metal-oxide-semiconductor-field-effect-transistor. Limitation on maximum stress introduced by wafer bending is improved when the III-V channel is grown epitaxially on silicon. 250 MPa of stress is achieved by wafer bending on III-V channel grown on silicon substrate, which is 5× higher than maximum stress achieved on III-V substrate.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 24 )

Date of Publication:

Jun 2010

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