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2.45 GHz GaN HEMT Class-AB RF power amplifier design for wireless communication systems

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4 Author(s)
Monprasert, G. ; Sirindhorn Int. Thai-German Grad. Sch. of Eng. (TGGS), King Mongkut''s Univ. of Technol. North Bangkok (KMUTNB), Bangkok, Thailand ; Suebsombut, P. ; Pongthavornkamol, T. ; Chalermwisutkul, S.

GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistors (LDMOS FET) that are presently popular power device for wireless and mobile communications but have a small bandwidth [1], [2], [3]. A GaN HEMT 2.45 GHz Class-AB RF power amplifier is proposed for wireless communication systems. The power device used is Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with Silicon as substrate material. The fabricated prototype of class-AB RF power amplifier fabricated can generate the maximum output power of 2.9 Watts and offer a power added efficiency (PAE) of 42.5%.

Published in:

Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010 International Conference on

Date of Conference:

19-21 May 2010