Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. For technical support, please contact us at onlinesupport@ieee.org. We apologize for any inconvenience.
By Topic

2.45 GHz GaN HEMT Class-AB RF power amplifier design for wireless communication systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Monprasert, G. ; Sirindhorn Int. Thai-German Grad. Sch. of Eng. (TGGS), King Mongkut''s Univ. of Technol. North Bangkok (KMUTNB), Bangkok, Thailand ; Suebsombut, P. ; Pongthavornkamol, T. ; Chalermwisutkul, S.

GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistors (LDMOS FET) that are presently popular power device for wireless and mobile communications but have a small bandwidth [1], [2], [3]. A GaN HEMT 2.45 GHz Class-AB RF power amplifier is proposed for wireless communication systems. The power device used is Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with Silicon as substrate material. The fabricated prototype of class-AB RF power amplifier fabricated can generate the maximum output power of 2.9 Watts and offer a power added efficiency (PAE) of 42.5%.

Published in:

Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON), 2010 International Conference on

Date of Conference:

19-21 May 2010