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Floating Gate Memory With Biomineralized Nanodots Embedded in \hbox {HfO}_{2}

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7 Author(s)
Kosuke Ohara ; Graduate School of Materials Science , Nara Institute of Science and Technology, Ikoma, Japan ; Yosuke Tojo ; Ichiro Yamashita ; Toshitake Yaegashi
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Memory properties of a nanodot-type floating gate memory with Co-bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High density and uniform Co-BNDs were adsorbed on a HfO2 tunnel oxide using ferritin. The fabricated MOS capacitor exhibited a capacitance-voltage curve with large hysteresis. The memory window size was 30 times larger than that of the MOS capacitor with an SiO2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for an MOS field-effect transistor. The high-performance nanodot-type floating gate memory was first fabricated at low temperature by utilizing supramolecular protein.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 3 )