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Copper oxide (CuxO) thin films were grown on SiO2/Si substrate by pulsed laser deposition under different substrate temperatures. Top-gate Cux O semiconductor thin-film transistors (TFTs) were fabricated with high- κ HfON as gate dielectric. The performance of Cu2O TFTs was improved due to increased Hall mobility resulting from the decreased scattering of both the ionized defects and the grain boundary for Cu2O channel films. The p-channel pure polycrystalline Cu2O TFTs (W/L = 500 μm/20 μm) exhibited a low threshold voltage of -0.8 V, an on-off current ratio of 3 x 106, a saturation mobility of 4.3 cm2/ V s, and a subthreshold swing of 0.18 V/decade.