By Topic

Analysis of the laser transmission rate of silicon (Si) applied to flip-chip bonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chun-Sam Song ; Inst. for Ind. Technol. Policy, Seoul Nat. Univ. of Technol., Seoul, South Korea ; Jong-Hyeong Kim ; Joo Han Kim ; Jong-Hyun Kim
more authors

The present study explored a flip-chip packaging method where transmission bonding is performed using the laser beam transmission rate of Si, the main material of flip chips. Here, the transmission of Si by a laser beam using laser wavelength in the IR domain (1,064 nm) was demonstrated through experiments. Further experiments were then conducted where the results were applied to actual flip chip bonding. The mechanical properties of the flip-chip solder joints were analyzed through experiments, and the degree of thermal effect was analyzed through simulation. The results showed that, in flip chip bonding, laser transmission bonding was advantageous in mechanical, thermal, and temporal terms relative to conventional bonding (thermo-compression).

Published in:

Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th

Date of Conference:

1-4 June 2010