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Leading edge foundry Si-based RF technology for wireless communication

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4 Author(s)
H. C. Tseng ; Research & Development, Taiwan Semiconductor Manufacturing Co. Ltd., Hsinchu, Taiwan, R.O.C. ; W. -C. Hua ; C. H. Chen ; C. C. Ho

As CMOS technology advances with increasingly scaled-down chip size and better MOSFET performance, new challenges and opportunities are observed in the innovation and optimization of integrated RF device for state-of-the-art RF system-on-chip (RFSOC). From technology foundry's viewpoint, this paper illustrates the essence of key RF SOC active and passive devices.

Published in:

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Date of Conference:

26-28 April 2010