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Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

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2 Author(s)
Chih-Hong Hwang ; Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yiming Li

The work-function fluctuation (WKF) induced threshold voltage variability (σVth) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σVth are drawn. The analytical expression of WKF-induced σVth can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.

Published in:

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Date of Conference:

26-28 April 2010