Referenced Items are not available for this document.
We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRAM directly on the silicided drain regions of MOSFETs, allowing compact integration with reduced process complexity and cost. Low reset current of 0.8 mA was achieved for contact dimensions of ~ 1 μm. Electrical and simulation results demonstrate the feasibility of employing silicides as a bottom electrode/heater in a PCRAM.
Published in:
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Date of Conference: 26-28 April 2010
- Page(s):
- 138 - 139
- ISSN :
- 1930-885X
- E-ISBN :
- 978-1-4244-5065-7
- Print ISBN:
- 978-1-4244-5063-3
- INSPEC Accession Number:
- 11501098
- Conference Location :
- Hsinchu
- Digital Object Identifier :
- 10.1109/VTSA.2010.5488913
- Product Type:
- Conference Publications
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